Synthesis of charged silica films of porous structure

A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. Thickness and porosity degree of the synthesized films have been estimated....

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Bibliographic Details
Published in:Functional Materials
Date:2008
Main Authors: Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2008
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/137233
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Synthesis of charged silica films of porous structure / Yu.S. Zharkikh, S.V. Lysochenko, O.A. Pylypenko, O.V. Tretyak // Functional Materials. — 2008. — Т. 15, № 1. — С. 127-130. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. Thickness and porosity degree of the synthesized films have been estimated. The films have been shown to be similar in structure to silica aerogel. The films using in the semiconductor microelectronics, in particular, for sensors and solar cells is proposed.
ISSN:1027-5495