Synthesis of charged silica films of porous structure

A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. Thickness and porosity degree of the synthesized films have been estimated....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Functional Materials
Datum:2008
Hauptverfasser: Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.
Format: Artikel
Sprache:English
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
Schlagworte:
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/137233
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Synthesis of charged silica films of porous structure / Yu.S. Zharkikh, S.V. Lysochenko, O.A. Pylypenko, O.V. Tretyak // Functional Materials. — 2008. — Т. 15, № 1. — С. 127-130. — Бібліогр.: 10 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. Thickness and porosity degree of the synthesized films have been estimated. The films have been shown to be similar in structure to silica aerogel. The films using in the semiconductor microelectronics, in particular, for sensors and solar cells is proposed.
ISSN:1027-5495