Synthesis of charged silica films of porous structure

• Опубліковано в: : Functional Materials
• Дата: 2008
• Автори: Zharkikh, Yu.S., Lysochenko, S.V., Pylypenko, O.A., Tretyak, O.V.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2008
• Теми: Technology
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/137233
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Synthesis of charged silica films of porous structure / Yu.S. Zharkikh, S.V. Lysochenko, O.A. Pylypenko, O.V. Tretyak // Functional Materials. — 2008. — Т. 15, № 1. — С. 127-130. — Бібліогр.: 10 назв. — англ.

A new technique has been proposed to obtain thin charged dielectric silica films with porous structure on a Si surface. The film composition and charge state of the dielectric/semiconductor system obtained have been studied. Thickness and porosity degree of the synthesized films have been estimated....