Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). T...
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| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2008 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2008
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/137235 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862539909772869632 |
|---|---|
| author | Misiuk, A. Ch. Lee |
| author_facet | Misiuk, A. Ch. Lee |
| citation_txt | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). The HT-(HP) treatment affects, among others, the solid phase epitaxial re-growth of amorphous a-Si layer created at implantation. Processed Si:V, Si:Cr and Si:Mn indicate magnetic ordering up to above 300 K. This means that the new Si:V, Si:Cr and Si:Mn materials belonging to the family of Diluted Magnetic Semiconductors have been produced.
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| first_indexed | 2025-11-24T15:49:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-137235 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-24T15:49:08Z |
| publishDate | 2008 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Misiuk, A. Ch. Lee 2018-06-17T09:16:17Z 2018-06-17T09:16:17Z 2008 Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/137235 This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). The HT-(HP) treatment affects, among others, the solid phase epitaxial re-growth of amorphous a-Si layer created at implantation. Processed Si:V, Si:Cr and Si:Mn indicate magnetic ordering up to above 300 K. This means that the new Si:V, Si:Cr and Si:Mn materials belonging to the family of Diluted Magnetic Semiconductors have been produced. en НТК «Інститут монокристалів» НАН України Functional Materials Technology Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment Матеріали для спінтроніки на основі кремнію, одержані шляхом імплантації та обробки температурою та тиском Article published earlier |
| spellingShingle | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment Misiuk, A. Ch. Lee Technology |
| title | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment |
| title_alt | Матеріали для спінтроніки на основі кремнію, одержані шляхом імплантації та обробки температурою та тиском |
| title_full | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment |
| title_fullStr | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment |
| title_full_unstemmed | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment |
| title_short | Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment |
| title_sort | silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment |
| topic | Technology |
| topic_facet | Technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/137235 |
| work_keys_str_mv | AT misiuka siliconbasedmaterialsforspintronicspreparedbyimplantationandtemperaturepressuretreatment AT chlee siliconbasedmaterialsforspintronicspreparedbyimplantationandtemperaturepressuretreatment AT misiuka materíalidlâspíntroníkinaosnovíkremníûoderžaníšlâhomímplantacíítaobrobkitemperaturoûtatiskom AT chlee materíalidlâspíntroníkinaosnovíkremníûoderžaníšlâhomímplantacíítaobrobkitemperaturoûtatiskom |