Structure of tantalum diboride thin films deposited by RF-magnetron sputtering

The tantalum diboride films have been deposited in various conditions by non-reactive RF magnetron sputtering. The film phase compositions and structures have been determined by X-ray diffraction, secondary ion mass spectrometry, and electron microscopy. The effect of the substrate temperature and o...

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Veröffentlicht in:Functional Materials
Datum:2008
Hauptverfasser: Konovalov, V.A., Terpiy, D.N., Klyahina, N.A., Kostenko, I.G., Vasetskaya, L.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2008
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/137237
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Structure of tantalum diboride thin films deposited by RF-magnetron sputtering / V.A. Konovalov, D.N. Terpiy, N.A. Klyahina, I.G. Kostenko, L.A. Vasetskaya // Functional Materials. — 2008. — Т. 15, № 1. — С. 144-148. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:The tantalum diboride films have been deposited in various conditions by non-reactive RF magnetron sputtering. The film phase compositions and structures have been determined by X-ray diffraction, secondary ion mass spectrometry, and electron microscopy. The effect of the substrate temperature and of positive bias potential value on the texturing extent and phase composition has been defined. Some general regularities of the film growth have been established: the formation of quasi-amorphous structure and its transition to textured condensate with various texturing extent.
ISSN:1027-5495