The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals
The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occ...
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| Published in: | Functional Materials |
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| Date: | 2008 |
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| Language: | English |
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НТК «Інститут монокристалів» НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/137245 |
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| Cite this: | The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. |
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Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. 2018-06-17T09:19:30Z 2018-06-17T09:19:30Z 2008 The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/137245 The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occur in the nanosecond range. The information on the nature and energy structure of the anisotropic impurity centers has been obtained. Two different photogeneration mechanisms of free electrons have been revealed: the direct photoionization of electrons from the ground impurity states and their self-ionization from the excited impurity states which are in resonance with the conduction band. It was found that the photosensitivity region for Cd₁₋ₓHgₓTe:V crystals (x = 0.018) at 300 K is in the range from 0.9 to 1.7 μm. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals Вплив домішкових і власних дефектів на енергетичну структуру та динаміку електронних процесів кристалах CdTe:V та Cd₁₋ₓHgₓTe:V Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| spellingShingle |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. Characterization and properties |
| title_short |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_full |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_fullStr |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_full_unstemmed |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_sort |
effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes cdte:v and cd₁₋ₓhgₓte:v crystals |
| author |
Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. |
| author_facet |
Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. |
| topic |
Characterization and properties |
| topic_facet |
Characterization and properties |
| publishDate |
2008 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| title_alt |
Вплив домішкових і власних дефектів на енергетичну структуру та динаміку електронних процесів кристалах CdTe:V та Cd₁₋ₓHgₓTe:V |
| description |
The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occur in the nanosecond range. The information on the nature and energy structure of the anisotropic impurity centers has been obtained. Two different photogeneration mechanisms of free electrons have been revealed: the direct photoionization of electrons from the ground impurity states and their self-ionization from the excited impurity states which are in resonance with the conduction band. It was found that the photosensitivity region for Cd₁₋ₓHgₓTe:V crystals (x = 0.018) at 300 K is in the range from 0.9 to 1.7 μm.
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| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/137245 |
| citation_txt |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. |
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| first_indexed |
2025-12-07T20:17:26Z |
| last_indexed |
2025-12-07T20:17:26Z |
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