The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals
The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occ...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2008 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2008
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/137245 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. |