The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals

The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occ...

Full description

Saved in:
Bibliographic Details
Published in:Functional Materials
Date:2008
Main Authors: Gnatenko, Yu.P., Bukivskij, P.M., Piryatinski, Yu.P., Faryna, I.O., Furyer, M.S., Gamernyk, R.V.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2008
Subjects:
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/137245
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Similar Items