The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals

• Опубліковано в: : Functional Materials
• Дата: 2008
• Автори: Gnatenko, Yu.P., Bukivskij, P.M., Piryatinski, Yu.P., Faryna, I.O., Furyer, M.S., Gamernyk, R.V.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: НТК «Інститут монокристалів» НАН України 2008
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/137245
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ.

The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occ...