The influence of point defects on the temperature dependence of quasi-two-dimensional 2H-NbSe₂ resistivity

• Опубліковано в: : Functional Materials
• Дата: 2005
• Автори: Mamalui, A.A., Shelest, T.N., Fatyanova, N.B., Sirenko, V.A.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2005
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/137632
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: The influence of point defects on the temperature dependence of quasi-two-dimensional 2H-NbSe₂ resistivity / A.A. Mamalui, T.N. Shelest, N.B. Fatyanova, V.A. Sirenko // Functional Materials. — 2005. — Т. 12, № 3. — С. 521-525. — Бібліогр.: 13 назв. — англ.

The processes of point defects forming in quasi-two-dimensional 2H-NbSe₂ crystals were studied experimentally by measuring the temperature-time resistivity dependencies in the temperature range 300-500 K. It is found out that the special property of (selenium vacancies) formation is the dependence o...