X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals

• Veröffentlicht in: Functional Materials
• Datum: 2005
• Hauptverfasser: Galiy, P.V., Musyanovych, A.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/137680
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: X-ray photoelectron spectroscopy of the interface formation on cleavage surfaces of the layered semiconductor In₄Se₃ crystals / P.V. Galiy, A.V. Musyanovych // Functional Materials. — 2005. — Т. 12, № 3. — С. 467-475. — Бібліогр.: 19 назв. — англ.

The results of X-ray photoelectron spectroscopy of the phase interface formation on the cleavage surfaces of layered semiconductor In₄Se₃, In₄Se₃(Cu) crystals are presented. The peculiarities of the process in the high-vacuum chamber atmosphere have been studied using the Auger electron spectroscopy...