Piezoresistive properties of boron-doped silicon whiskers at cryogenic temperatures

• Veröffentlicht in: Functional Materials
• Datum: 2004
• ISSN: 1027-5495
• Hauptverfasser: Druzhinin, A.A., Maryamova, I.I., Pavlovskyy, I.V., Palewski, T.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/138789
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Piezoresistive properties of boron-doped silicon whiskers at cryogenic temperatures/ A.A. Druzhinin, I.I. Maryamova, I.V. Pavlovskyy, T. Palewski// Functional Materials. — 2004. — Т. 11, № 2. — С. 268-272. — Бібліогр.: 10 назв. — англ.

Piezoresistive properties of boron-doped p-type silicon whiskers in temperature range of 1.7 to 300 K were studied. The giant piezoresistance was observed in p-Si whiskers in the vicinity of metal-insulator transition at helium temperatures. The gauge factor dependence on impurity concentration and...