Piezoresistive properties of boron-doped silicon whiskers at cryogenic temperatures
Piezoresistive properties of boron-doped p-type silicon whiskers in temperature range of 1.7 to 300 K were studied. The giant piezoresistance was observed in p-Si whiskers in the vicinity of metal-insulator transition at helium temperatures. The gauge factor dependence on impurity concentration and...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/138789 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Piezoresistive properties of boron-doped silicon whiskers at cryogenic temperatures/ A.A. Druzhinin, I.I. Maryamova, I.V. Pavlovskyy, T. Palewski// Functional Materials. — 2004. — Т. 11, № 2. — С. 268-272. — Бібліогр.: 10 назв. — англ. |