Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model

• Veröffentlicht in: Functional Materials
• Datum: 2004
• Hauptverfasser: Virchenko, Yu.P., Vodyanitskii, Yu.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/138794
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model / Yu.P.Virchenko, A.A.Vodyanitskii // Functional Materials. — 2004. — Т. 11, № 2. — С. 236-240. — англ.

Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum princi...