Crystal defects in epitaxial InP layers: electrical and scanning electron microscope study

• Published in: Functional Materials
• Date: 2004
• Main Authors: Horvath, Zs.J., Toth, A.L., Rakovics, V., Paszti, Z., Peto, G.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2004
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/138817
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Crystal defects in epitaxial InP layers: electrical and scanning electron microscope study / Zs.J. Horvath, A.L. Toth, V. Rakovics, Z. Paszti, G. Peto // Functional Materials. — 2004. — Т. 11, № 2. — С. 376-380. — Бібліогр.: 18 назв. — англ.

Electrical characteristics of p-type Au/lnP Schottky junctions with Pt nanoparticles sandwiched in epitaxial layer have been studied and compared with reference samples. Various anomalies have been obtained, some of them are similar to the behavior of quantum dot structures. However, it is concluded...