APA (7th ed.) Citation

Horvath, Z., Orlov, L., Ivina, N., Demidov, E., Vdovin, V., Adam, M., . . . Yakunin, S. (2004). Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures. НТК «Інститут монокристалів» НАН України.

Chicago Style (17th ed.) Citation

Horvath, Zs.J, et al. Effect of Dislocations in Relaxed MBE SiGe Layers on the Electrical Behavior of Si/SiGe Heterostructures. НТК «Інститут монокристалів» НАН України, 2004.

MLA (8th ed.) Citation

Horvath, Zs.J, et al. Effect of Dislocations in Relaxed MBE SiGe Layers on the Electrical Behavior of Si/SiGe Heterostructures. НТК «Інститут монокристалів» НАН України, 2004.

Warning: These citations may not always be 100% accurate.