Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anoma...
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| Datum: | 2004 |
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| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Schriftenreihe: | Functional Materials |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/138819 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anomalies, the electrical measurements provide useful and reliable information on the structures. |
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