Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

• Veröffentlicht in: Functional Materials
• Datum: 2005
• Hauptverfasser: Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/138859
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects / V.K. Dubovyi, S.O. Kanevsky, P.G. Litovchenko, V.Ya. Opilat, V.P. Tartachnik // Functional Materials. — 2005. — Т. 12, № 3. — С. 587-590. — Бібліогр.: 11 назв. — англ.

The GaP diode radiation-induced degradation has been established to be caused mainlу bу the reduction of the current carrier lifetime resulting from introduction of non-radiative deep levels of the radiation-induced defects. A thin structure has been revealed in the voltage-current characteristics (...