Photoluminescence and electrophysical properties of p-type ZnO layers implanted with V Group elements

• Veröffentlicht in: Functional Materials
• Datum: 2005
• Hauptverfasser: Kotlyarevsky, M.B., Rogozin, I.V., Marakhovsky, O.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/138871
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoluminescence and electrophysical properties of p-type ZnO layers implanted with V Group elements / M.B. Kotlyarevsky, I.V. Rogozin, O.V. Marakhovsky // Functional Materials. — 2005. — Т. 12, № 4. — С. 616-621. — Бібліогр.: 19 назв. — англ.

Ion implantation of arsenic and nitrogen into zinc oxide film (As and N being acceptor impurities in ZnO) has been shown to result in formation of the hole conductivity only if the film is annealed in the presence of oxygen radicals. The ion implantation and sub- sequent anneal influence no...