Investigation of (100) In₄Se₃ crystal surface nanorelief

• Published in: Functional Materials
• Date: 2009
• Main Authors: Galiy, P.V., Ciszewski, A., Dveriy, O.R., Losovyj, Ya.B., Mazur, P., Nenchuk, T.M., Zuber, S., Fiyala, Ya.M.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2009
• Subjects: Characterization and properties
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/138900
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Investigation of (100) In₄Se₃ crystal surface nanorelief // P.V. Galiy, A. Ciszewski, O.R. Dveriy, Ya.B. Losovyj, P. Mazur, T.M. Nenchuk, S. Zuber, Ya.M. Fiyala // Functional Materials. — 2009. — Т. 16, № 3. — С. 279-285. — Бібліогр.: 11 назв. — англ.

The crystallography and topography of the (100) cleavage surfaces of layered semiconductor In₄Se₃ crystal have been studied by low energy electron diffraction (LEED), scanning tunnelling and atomic-force microscopy (STM, AFM) in ultrahigh vacuum (UHV). The structure of surface LEED patterns, shape a...