Radiation influence on characteristics of GaP light emitting diodes

• Published in: Functional Materials
• Date: 2009
• Main Authors: Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2009
• Subjects: Characterization and properties
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/138911
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiation influence on characteristics of GaP light emitting diodes // A. Borzakovskyj, O. Gontaruk, V. Kochkin, P. Litovchenko, V. Opilat, I. Petrenko, V. Tartachnyk // Functional Materials. — 2009. — Т. 16, № 3. — С. 313-318. — Бібліогр.: 20 назв. — англ.

The capacitance properties of GaP green and red LEDs have been studied. It was found the character of a doping impurity distribution in the depleted region and the junction depth dependence on bias voltage and impurity concentration in the low-doped part of the p-n junction have been established. Th...