Transient mode features at sapphire growing by horizontal directional crystallization

• Published in: Functional Materials
• Date: 2009
• Main Authors: Barannik, S.V., Kanischev, V.N., Nizhankovsky, S.V., Stepanenko, A.M.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2009
• Subjects: Technology
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/138927
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Transient mode features at sapphire growing by horizontal directional crystallization // S.V. Barannik, V.N. Kanischev, S.V. Nizhankovsky, A.M. Stepanenko // Functional Materials. — 2009. — Т. 16, № 4. — С. 498-500. — Бібліогр.: 6 назв. — англ.

The behavior of the crystal/alumina melt boundary has been studied at the start and final stages of sapphire growing by horizontal directional crystallization. At a constant pulling speed of the crystal into the cold zone, the time dependence of the melt crystallization rate may behave nonmonotonica...