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Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique

The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been...

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Bibliographic Details
Published in:	Functional Materials
Date:	2005
Main Authors:	Kozhemyakin, G.N., Ruban, R.V.
Format:	Article
Language:	English
Published:	НТК «Інститут монокристалів» НАН України 2005
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/138949
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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