Superconducting and normal properties of the set of Mo/Si superlattices with variable Si layer thickness

• Veröffentlicht in: Физика низких температур
• Datum: 1999
• Hauptverfasser: Mikhailov, M.Yu., Yuzephovich, O.I., Pokhila, A.S., Bomze, Yu.V., Fogel, N.Ya., Dmitrenko, I.M., Yulin, S.A., Sidorenko, A.S., Moldovan, O.B.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1999
• Schlagworte: Свеpхпpоводимость, в том числе высокотемпеpатуpная
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/138982
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Superconducting and normal properties of the set of Mo/Si superlattices with variable Si layer thickness / M.Yu. Mikhailov, O.I. Yuzephovich, A.S. Pokhila, Yu.V. Bomze, N.Ya. Fogel, I.M. Dmitrenko, S.A. Yulin, A.S. Sidorenko, O.B. Moldovan // Физика низких температур. — 1999. — Т. 25, № 8. — С. 850-856. — Бібліогр.: 38 назв. — англ.

We report the results of the superconducting and kinetic parameter measurements (transition temperature Tc, parallel and perpendicular critical fields Hc₂, resistivity in the normal state) on a set of Mo/Si superconducting superlattices with a constant metal layer thickness dₘₒ=22 A and variable semiconducting one dₛᵢ(14-44 A ). Our data show a monotonic dependence of all measured parameters on dₛᵢ. It is found that the Josephson interlayer coupling energy depends exponentially on the spacer thickness. The data obtained allowed us to determine the characteristic electron tunneling length for amorphous silicon with high precision. It is equal to 3.9 A. Enhancement of interlayer coupling leads to the Mo/Si multilayer transition temperature increasing, in agreement with Horovitz theory and with the experimental data on high-Tc materials.