Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction

In an approach of low transparency of the barrier the tunneling of electrons through doubly degenerate local state has been considered with allowance for the Coulomb and electron-phonon interactions. It is shown that in the case of weak electron-phonon and strong electron-electron interactions the d...

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Published in:Физика низких температур
Date:1999
Main Author: Ermakov, V.N.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1999
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/139040
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction / V.N. Ermakov // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1040-1046. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-139040
record_format dspace
spelling Ermakov, V.N.
2018-06-19T18:41:28Z
2018-06-19T18:41:28Z
1999
Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction / V.N. Ermakov // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1040-1046. — Бібліогр.: 20 назв. — англ.
0132-6414
https://nasplib.isofts.kiev.ua/handle/123456789/139040
In an approach of low transparency of the barrier the tunneling of electrons through doubly degenerate local state has been considered with allowance for the Coulomb and electron-phonon interactions. It is shown that in the case of weak electron-phonon and strong electron-electron interactions the dependence of tunneling current on the applied voltage has a step-like character at low temperature. The threshold value of the current was measured for small applied bias. The bistable state of the tunneling current is possible in the region of large bias. In the case of strong electron-phonon and weak electron-electron interactions, the threshold of tunneling current can be bistable. This result is a direct consequence of the electron pairing in local states.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Электpонные свойства металлов и сплавов
Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
spellingShingle Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
Ermakov, V.N.
Электpонные свойства металлов и сплавов
title_short Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
title_full Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
title_fullStr Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
title_full_unstemmed Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
title_sort nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction
author Ermakov, V.N.
author_facet Ermakov, V.N.
topic Электpонные свойства металлов и сплавов
topic_facet Электpонные свойства металлов и сплавов
publishDate 1999
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description In an approach of low transparency of the barrier the tunneling of electrons through doubly degenerate local state has been considered with allowance for the Coulomb and electron-phonon interactions. It is shown that in the case of weak electron-phonon and strong electron-electron interactions the dependence of tunneling current on the applied voltage has a step-like character at low temperature. The threshold value of the current was measured for small applied bias. The bistable state of the tunneling current is possible in the region of large bias. In the case of strong electron-phonon and weak electron-electron interactions, the threshold of tunneling current can be bistable. This result is a direct consequence of the electron pairing in local states.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/139040
fulltext
citation_txt Nonlunear resonant tunnelling through doubly degenerate local state and strong electron-phonon interaction / V.N. Ermakov // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1040-1046. — Бібліогр.: 20 назв. — англ.
work_keys_str_mv AT ermakovvn nonlunearresonanttunnellingthroughdoublydegeneratelocalstateandstrongelectronphononinteraction
first_indexed 2025-11-24T06:25:37Z
last_indexed 2025-11-24T06:25:37Z
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