Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr
A tunneling structures NbZr/NbOₓ/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOₓ/Al junction and 4 to 6-nm-thick Al interlayer were prepared and studied experimentally. A proximity effect between NbZr and Al through NbOₓ barrier has been observed. An electrical voltage was generated in the NbOx ba...
Збережено в:
| Опубліковано в: : | Физика низких температур |
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| Дата: | 1999 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/139060 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr / A. Plecenik, S. Gazi, M. Zuzcak, S. Benacka, V. Shaternik, E. Rudenko // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1082-1086. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A tunneling structures NbZr/NbOₓ/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOₓ/Al junction and 4 to 6-nm-thick Al interlayer were prepared and studied experimentally. A proximity effect between NbZr and Al through NbOₓ barrier has been observed. An electrical voltage was generated in the NbOx barrier and a coexistence of the proximity effect and applied voltage in the junction NbZr/NbOₓ/Al has been observed. This experiment could be described on the basis of a model for coherent charge transport in superconducting/normal proximity structures.
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| ISSN: | 0132-6414 |