Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr

• Published in: Физика низких температур
• Date: 1999
• Main Authors: Plecenik, A., Gazi, S., Zuzcak, M., Benacka, S., Shaternik, V., Rudenko, E.
• Format: Article
• Language: English
• Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 1999
• Subjects: Низкоразмерные и неупорядоченные системы
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/139060
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Proximity phenomena in double-barrier structure NbZr/NbOₓ/Al/AlOy/NbZr / A. Plecenik, S. Gazi, M. Zuzcak, S. Benacka, V. Shaternik, E. Rudenko // Физика низких температур. — 1999. — Т. 25, № 10. — С. 1082-1086. — Бібліогр.: 7 назв. — англ.

A tunneling structures NbZr/NbOₓ/Al/AlOy/NbZr with a thin barrier in the NbZr/NbOₓ/Al junction and 4 to 6-nm-thick Al interlayer were prepared and studied experimentally. A proximity effect between NbZr and Al through NbOₓ barrier has been observed. An electrical voltage was generated in the NbOx ba...