Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline

• Veröffentlicht in: Functional Materials
• Datum: 2005
• Hauptverfasser: Stakhira, P., Aksimentieva, E., Mykytyuk, Z., Cherpak, V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/139307
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photovoltaic properties of a heterostructure on the basis of porous silicon and polyaniline / P. Stakhira, E. Aksimentieva, Z. Mykytyuk, V. Cherpak // Functional Materials. — 2005. — Т. 12, № 4. — С. 807-809. — Бібліогр.: 8 назв. — англ.

An electric junction between porous silicon (n-type conductivity) and conductive polyaniline (p-type conductivity) has been made by electrochemical polymerization of aniline on the porous silicon surface. This heterostructure has been found to exhibit rectifying І-V characteristics. Under illuminati...