Peculiarities of Si-Ge whisker growing by CTR method

• Published in: Functional Materials
• Date: 2005
• Main Authors: Druzhinin, A.A., Ostrovskii, I.P., Khoverko, Yu.M., Gij, Ya.V.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/139317
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Peculiarities of Si-Ge whisker growing by CTR method / A.A. Druzhinin, I.P. Ostrovskii, Yu.M. Khoverko, Ya.V. Gij // Functional Materials. — 2005. — Т. 12, № 4. — С. 738-741. — Бібліогр.: 9 назв. — англ.

Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence of specific resistance at 300 К has been revealed. The Si₁₋ₓGeₓ (х = 0.05) whisk...