Influence of impurity on electronic transition in coherent-strained quantum dot

• Veröffentlicht in: Functional Materials
• Datum: 2006
• Hauptverfasser: Dan'kiv, O.O., Peleshchak, R.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/139493
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of impurity on electronic transition in coherent-strained quantum dot / O.O. Dan'kiv, R.M. Peleshchak // Functional Materials. — 2006. — Т. 13, № 1. — С. 14-20. — Бібліогр.: 17 назв. — англ.

The influence of impurity on energy breadth of an optical gap for quantum dot is studied within the framework of deformation potential model. It is established that with size increase of a quantum dot with an ionization donor dopant an optical gap diminishes.
 For smaller radiuses (R₀...