Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals
Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as w...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2004 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2004
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/139500 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals / O. Chugai, V. Ryzhikov, N. Starzhinskiy, S. Oleynik, K. Katrunov, I. Zenya // Functional Materials. — 2004. — Т. 11, № 4. — С. 684-688. — Бібліогр.: 7 назв. — англ. |