Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals

• Veröffentlicht in: Functional Materials
• Datum: 2004
• Hauptverfasser: Chugai, O., Ryzhikov, V., Starzhinskiy, N., Oleynik, S., Katrunov, K., Zenya, I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/139500
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals / O. Chugai, V. Ryzhikov, N. Starzhinskiy, S. Oleynik, K. Katrunov, I. Zenya // Functional Materials. — 2004. — Т. 11, № 4. — С. 684-688. — Бібліогр.: 7 назв. — англ.

Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc atmosphere causes the increase of C by 2-3 orders of magnitude. This parameter, as w...