Nadtochiy, V., Golodenko, N., & Nechvolod, N. (2005). Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer. Functional Materials.
Chicago Style (17th ed.) CitationNadtochiy, V., N. Golodenko, and N. Nechvolod. "Recombination of Non-equilibrium Charge Carriers Injected into Ge Through Intermediate Defective Layer." Functional Materials 2005.
MLA (8th ed.) CitationNadtochiy, V., et al. "Recombination of Non-equilibrium Charge Carriers Injected into Ge Through Intermediate Defective Layer." Functional Materials, 2005.
Warning: These citations may not always be 100% accurate.