Nadtochiy, V., Golodenko, N., & Nechvolod, N. (2005). Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer. Functional Materials.
Chicago-Zitierstil (17. Ausg.)Nadtochiy, V., N. Golodenko, und N. Nechvolod. "Recombination of Non-equilibrium Charge Carriers Injected into Ge Through Intermediate Defective Layer." Functional Materials 2005.
MLA-Zitierstil (8. Ausg.)Nadtochiy, V., et al. "Recombination of Non-equilibrium Charge Carriers Injected into Ge Through Intermediate Defective Layer." Functional Materials, 2005.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.