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Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer

The recombination of non-equilibrium charge carriers injected into n-Ge sample through an intermediate defect layer has been studied in experiment as well as theoretically. The structure defects were formed by cyclic straining with simultaneous ultrasonic irradiation of the sample at 310 K. Distribu...

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Veröffentlicht in:	Functional Materials
Datum:	2005
Hauptverfasser:	Nadtochiy, V., Golodenko, N., Nechvolod, N.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	НТК «Інститут монокристалів» НАН України 2005
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/139745
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer / V. Nadtochiy, N. Golodenko, N. Nechvolod // Functional Materials. — 2005. — Т. 12, № 1. — С. 45-50. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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