Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer

• Published in: Functional Materials
• Date: 2005
• Main Authors: Nadtochiy, V., Golodenko, N., Nechvolod, N.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2005
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/139745
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Recombination of non-equilibrium charge carriers injected into Ge through intermediate defective layer / V. Nadtochiy, N. Golodenko, N. Nechvolod // Functional Materials. — 2005. — Т. 12, № 1. — С. 45-50. — Бібліогр.: 12 назв. — англ.

The recombination of non-equilibrium charge carriers injected into n-Ge sample through an intermediate defect layer has been studied in experiment as well as theoretically. The structure defects were formed by cyclic straining with simultaneous ultrasonic irradiation of the sample at 310 K. Distribu...