Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates
The possibility to obtain a heterosystem consisting of the upper partially strained and lower relaxed layers by gradient in situ doping of SiGe layers with carbon is considered. The properties of the as-grown and annealed (600 to 1000℃) samples have been studied by Raman spectroscopy and atomic forc...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/140066 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates / M.Ya. Valakh, D.V. Gamov, V.M. Dzhagan, O.S. Lytvyn, V.P. Melnik, B.M. Romanjuk, V.G. Popov, V.O. Yukhymchuk // Functional Materials. — 2006. — Т. 13, № 1. — С. 79-84. — Бібліогр.: 16 назв. — англ. |