Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness

• Published in: Металлофизика и новейшие технологии
• Date: 2018
• Main Authors: Liubchenko, O.I., Kladko, V.P.
• Format: Article
• Language: English
• Published: Інститут металофізики ім. Г.В. Курдюмова НАН України 2018
• Subjects: Строение и свойства наноразмерных и мезоскопических материалов
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/146953
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness / O.I. Liubchenko, V.P. Kladko // Металлофизика и новейшие технологии. — 2018. — Т. 40, № 6. — С. 759-776. — Бібліогр.: 38 назв. — англ.

A detailed XRD analysis of AlN/GaN multiple quantum well (MQW) structures grown on AlN(0001) substrates is proposed. The effect of roughness on the 2θ-ω scans measured in Bragg diffraction for symmetrical reflections is investigated together with the effect of depth variation of the well and barrier...