Implantation of deuterium and helium ions into composite structure with tantalum coating
Processes of retention and thermal release of implanted deuterium and helium from tantalum coatings of multilayer composite structure by thermodesorption spectrometry were investigated. The dependences of amount of accumulated deuterium and helium, and the shape of thermal desorption spectra as func...
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Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2018
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| Cite this: | Implantation of deuterium and helium ions into composite structure with tantalum coating / V.V. Bobkov, L.P. Tishchenko, Yu.I. Kovtunenko, O.B. Tsapenko, A.O. Skrypnik, Yu.E. Logachev, L.A. Gamayunova // Вопросы атомной науки и техники. — 2018. — № 6. — С. 63-66. — Бібліогр.: 11 назв. — англ. |
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Bobkov, V.V. Tishchenko, L.P. Kovtunenko, Yu.I. Tsapenko, O.B. Skrypnik, A.O. Logachev, Yu.E. Gamayunova, L.A. 2019-02-18T20:10:56Z 2019-02-18T20:10:56Z 2018 Implantation of deuterium and helium ions into composite structure with tantalum coating / V.V. Bobkov, L.P. Tishchenko, Yu.I. Kovtunenko, O.B. Tsapenko, A.O. Skrypnik, Yu.E. Logachev, L.A. Gamayunova // Вопросы атомной науки и техники. — 2018. — № 6. — С. 63-66. — Бібліогр.: 11 назв. — англ. 1562-6016 PACS: 61.80.-x, 61.80.Jh https://nasplib.isofts.kiev.ua/handle/123456789/148847 Processes of retention and thermal release of implanted deuterium and helium from tantalum coatings of multilayer composite structure by thermodesorption spectrometry were investigated. The dependences of amount of accumulated deuterium and helium, and the shape of thermal desorption spectra as functions of the D⁺ and He⁺ ions fluencies and of the temperature of irradiation were shown. Possible mechanisms of these processes are proposed. Методом термодесорбційної спектрометрії досліджено процеси накопичення і виділення дейтерію та гелію у вакуум із танталових покриттів композиційної структури. Кількість накопиченого дейтерію та гелію і вигляд спектрів термічної десорбції показано в залежності від дози опромінення іонами D⁺ або He⁺ та температури зразка при опроміненні. Запропоновано можливі механізми цих процесів. Методом термодесорбционной спектрометрии исследованы процессы накопления и выделения дейтерия и гелия в вакуум из танталовых покрытий композиционной структуры. Количество накопленного дейтерия и гелия и вид спектров термической десорбции показаны в зависимости от дозы облучения ионами D⁺ или He⁺ и температуры образца при облучении. Предложены возможные механизмы этих процессов. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники ИТЭР и приложения для термоядерного реактора Implantation of deuterium and helium ions into composite structure with tantalum coating Імплантація іонів дейтерію та гелію в композиційну структуру з танталовим покриттям Имплантация ионов дейтерия и гелия в композиционную структуру с танталовым покрытием Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Implantation of deuterium and helium ions into composite structure with tantalum coating |
| spellingShingle |
Implantation of deuterium and helium ions into composite structure with tantalum coating Bobkov, V.V. Tishchenko, L.P. Kovtunenko, Yu.I. Tsapenko, O.B. Skrypnik, A.O. Logachev, Yu.E. Gamayunova, L.A. ИТЭР и приложения для термоядерного реактора |
| title_short |
Implantation of deuterium and helium ions into composite structure with tantalum coating |
| title_full |
Implantation of deuterium and helium ions into composite structure with tantalum coating |
| title_fullStr |
Implantation of deuterium and helium ions into composite structure with tantalum coating |
| title_full_unstemmed |
Implantation of deuterium and helium ions into composite structure with tantalum coating |
| title_sort |
implantation of deuterium and helium ions into composite structure with tantalum coating |
| author |
Bobkov, V.V. Tishchenko, L.P. Kovtunenko, Yu.I. Tsapenko, O.B. Skrypnik, A.O. Logachev, Yu.E. Gamayunova, L.A. |
| author_facet |
Bobkov, V.V. Tishchenko, L.P. Kovtunenko, Yu.I. Tsapenko, O.B. Skrypnik, A.O. Logachev, Yu.E. Gamayunova, L.A. |
| topic |
ИТЭР и приложения для термоядерного реактора |
| topic_facet |
ИТЭР и приложения для термоядерного реактора |
| publishDate |
2018 |
| language |
English |
| container_title |
Вопросы атомной науки и техники |
| publisher |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| format |
Article |
| title_alt |
Імплантація іонів дейтерію та гелію в композиційну структуру з танталовим покриттям Имплантация ионов дейтерия и гелия в композиционную структуру с танталовым покрытием |
| description |
Processes of retention and thermal release of implanted deuterium and helium from tantalum coatings of multilayer composite structure by thermodesorption spectrometry were investigated. The dependences of amount of accumulated deuterium and helium, and the shape of thermal desorption spectra as functions of the D⁺
and He⁺
ions
fluencies and of the temperature of irradiation were shown. Possible mechanisms of these processes are proposed.
Методом термодесорбційної спектрометрії досліджено процеси накопичення і виділення дейтерію та гелію у вакуум із танталових покриттів композиційної структури. Кількість накопиченого дейтерію та гелію і
вигляд спектрів термічної десорбції показано в залежності від дози опромінення іонами D⁺
або He⁺
та температури зразка при опроміненні. Запропоновано можливі механізми цих процесів.
Методом термодесорбционной спектрометрии исследованы процессы накопления и выделения дейтерия
и гелия в вакуум из танталовых покрытий композиционной структуры. Количество накопленного дейтерия и
гелия и вид спектров термической десорбции показаны в зависимости от дозы облучения ионами D⁺ или He⁺
и температуры образца при облучении. Предложены возможные механизмы этих процессов.
|
| issn |
1562-6016 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/148847 |
| citation_txt |
Implantation of deuterium and helium ions into composite structure with tantalum coating / V.V. Bobkov, L.P. Tishchenko, Yu.I. Kovtunenko, O.B. Tsapenko, A.O. Skrypnik, Yu.E. Logachev, L.A. Gamayunova // Вопросы атомной науки и техники. — 2018. — № 6. — С. 63-66. — Бібліогр.: 11 назв. — англ. |
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2025-11-26T16:39:27Z |
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2025-11-26T16:39:27Z |
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| fulltext |
ISSN 1562-6016. ВАНТ. 2018. №6(118)
PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY. 2018, № 6. Series: Plasma Physics (118), p. 63-66. 63
IMPLANTATION OF DEUTERIUM AND HELIUM IONS INTO
COMPOSITE STRUCTURE WITH TANTALUM COATING
V.V. Bobkov, L.P. Tishchenko, Yu.I. Kovtunenko, O.B. Tsapenko, A.O. Skrypnik,
Yu.E. Logachev, L.A. Gamayunova
V.N. Karazin Kharkiv National University, Kharkiv, Ukraine
E-mail: bobkov@karazin.ua
Processes of retention and thermal release of implanted deuterium and helium from tantalum coatings of multi-
layer composite structure by thermodesorption spectrometry were investigated. The dependences of amount of ac-
cumulated deuterium and helium, and the shape of thermal desorption spectra as functions of the D+ and He+ ions
fluencies and of the temperature of irradiation were shown. Possible mechanisms of these processes are proposed.
PACS: 61.80.-x, 61.80.Jh
INTRODUCTION
Tantalum and tungsten are considered [1-4] as the
materials used for protective coatings of structures
facing the plasma in CTF facilities. One of the ad-
vantages of their application is the insignificant accu-
mulation of hydrogen isotopes in them under the effect
of plasma flows. Being actual, this problem is studied
intensively [1-7] to increase the radiation resistance of
CTF facilities and to obtain new materials with im-
proved parameters while using the ion implantation
technique. In [5-8] we carried out comprehensive anal-
ysis of the radiation defects formation in matrix, of
capture, retention, and thermal desorption of ion-
implanted deuterium and helium in tungsten coatings
of multilayer composite systems. In this paper the pro-
cesses accompanying the implantation of deuterium
and helium ions into the composite structures with
tantalum coating: capture, retention and release of the
implanted gases from the coating were studied. The
effects of the irradiation dose of D+ and He+ ions and
the temperature of the sample on the above processes
under irradiation were shown. The processes of accu-
mulation and retention of deuterium and helium under
the ion irradiation and of the thermal desorption of
these gases from Ta and W coatings at the subsequent
heating were compared. The types of the matrix radia-
tion damage were determined; their influence on the
coatings structural features was shown.
1. EXPERIMENTS
The studies were carried out on tantalum coatings
obtained by magnetron sputtering of Ta target in the Ar
atmosphere at the pressure of 1.0 Pa. The deposition
was carried out at the rate of 0.6 nm/s at the tempera-
ture T = 600 K on a 0.8 mm thick stainless steel sub-
strate with a Ti interlayer of less than 10 nm thickness
predeposited on it. The thickness of the tantalum coat-
ings under study was 1.5 μm. The composite structure
with a Ta coating was marked as (SSt + Ta). The sam-
ples were irradiated by ion beams of 20 keV He+ or
20 keV D2
+ (10 keV D+), at the current density of
5 μA/cm2 to the doses Ф within the interval of
(0.1…1.1) × 1018 cm-2. Deuterium ions were implanted
into the tantalum coatings at the sample temperatures
To: 290, 370, 470, 570, and 670 K. According to the
calculations in [9] for the ions D+ (10 keV) and He+
(20 keV) the mean projective ranges of the ion in the
tantalum coatings were about 60 nm, and total ones
were about 160 nm. They were comparable for the ions
under study and much shorter than the coating thick-
ness.
In the studies, the method of thermodesorption
spectrometry (TDS) was used. Thermodesorption spec-
tra of helium and deuterium were obtained using PTI-
7A gas mass spectrometer calibrated with a helium
leak valve GELIT-1, applying the data of [10] on the
ionization cross section of helium and deuterium parti-
cles in the ion source of this mass spectrometer. The
spectra of thermal desorption of helium and deuterium
were obtained, and the values of the concentration C
and of the capture coefficient η = C/Ф of the implanted
gases were determined. The studies of helium and
deuterium thermal desorption were carried out by heat-
ing the irradiated samples at the constant rate
α = 0.8 K/s in the temperature range of 290…1800 K.
The spectra represent the dependences of the number
of S particles of the implanted gas released at the given
heating temperature T on this temperature. The error of
the temperature measuring is ± 25 K. The sensitivity of
the technique used to determine S is not worse than
2 × 1012 cm-2. When the unirradiated samples were
heated in the same temperature range, the maximum of
background intensity for ions with m = 4 a.m.u. did not
exceed S = 0.003 × 1016 cm-2.
2. RESULTS AND DISCUSSION
When a composite structure with the tantalum coat-
ing irradiated by D+ or He+ ions is heated, thermal
release of the gases implanted into the vacuum is ob-
served. Fig. 1 shows the spectra of deuterium thermal
desorption from the tantalum coating of the composi-
tion (SSt + Ta) (curves 1-5). For comparison, the data
on thermal desorption from the tungsten coating of the
composition (SSt + W) (curves 1'-6') taken from [8] are
given. The compared samples were irradiated at the
room temperature by D+ ions with the same energy to
different doses.
mailto:bobkov@karazin.ua
64 ISSN 1562-6016. ВАНТ. 2018. №6(118)
The spectra of the deuterium thermal desorption
from the tantalum coating of the same composite struc-
ture, irradiated by D+ ions with the same dose
(ФD+ = 2.0 × 1017 cm-2) but at different temperatures of
the samples during deuterium implantation, are shown
in Fig. 2.
0
0.2
0.4
0.6
0.8
1
200 400 600 800 1000 1200 1400 1600
T , K
S
,
1
0
1
6
c
m
-2
5'
2'
1'
4'
3'
6'
1
2
3
4
5
Fig. 1. The spectra of the deuterium thermal desorption
from the Ta coating irradiated with D+ ions (ФD+,
1017 m-2: 1 – 1.0; 2 – 2.0; 3 – 4.0; 4 – 8.0;
5 – 11.0) and, according to [8], from the W coating
irradiated with D+ ions (ФD+, 1017 cm-2: 1' – 1.0;
2' – 2.0; 3' – 3.0; 4' – 4.0; 5' – 5.0; 6' – 7.0); α = 0.8 K/s
0
0.05
0.1
0.15
200 400 600 800 1000 1200 1400 1600
T , K
S
,
1
0
1
6
c
m
-2
1
2
3
4
5
Fig. 2. The spectra of the deuterium thermal desorption
from the Ta coating irradiated with D+ ions
(ФD+, 2.0 × 1017 cm-2) at different temperatures of
irradiation To, K: 1 – 290; 2 – 370; 3 – 470; 4 – 570;
5 – 670; α = 0.8 K/s
Figs. 1 and 2 show, that a noticeable release of deu-
terium from the tantalum coating starts at temperatures
T ≥ 620 K and finished at T ≈ 1200 K (curves 1-5). The
maximal thermal desorption of deuterium is observed
at the temperature Tm ≈ 770 K. According to [8], a
noticeable deuterium release from the tungsten coating
starts at temperatures T ≥ 320 K and finished at
T ≈ 1000 K (see Fig. 1, curves 1′-6'). The peak of ther-
mal desorption of deuterium from the W coating has its
maximum at Tm ≈ 640 K.
The thermal desorption spectra of the deuterium,
whose ions are implanted into Ta or W coatings at the
irradiation doses not exceeding 11.0 × 1017 cm-2 for Ta
and 7.0 × 1017 cm-2 for W, have the form of a single-
peak dependence. For the peak of deuterium release
from the Ta coating Tm shifts to a higher temperature,
and the peak intensity is about a half of the thermal
desorption peak from tungsten.
Fig. 3 shows the spectra of helium thermal desorp-
tion from the tantalum coating of the composition
(SSt + Ta) (curves 1-4) and, for comparison, the analo-
gous results of thermal desorption from the tungsten
coating of the composition (SSt + W) (curves 1'-4'),
taken from [8]. The compared samples were irradiated
at the room temperature by He+ ions of the same ener-
gy to different similar doses.
0
2
4
6
8
10
200 400 600 800 1000 1200 1400 1600 1800
T , K
S
,
1
0
1
6
c
m
-2
1'
1
2
2'
4
3
3'
4'
Fig. 3. The spectra of helium thermal desorption from
the Ta coating irradiated with He+ ions
(ФHe+, 1017 cm-2: 1 – 1.0; 2 – 1.9; 3 – 4.2; 4 – 6.0) and,
according to [8], from the W coating irradiated with
He+ ions (ФHe+, 1017 cm-2: 1' – 1.0; 2' – 2.0; 3' – 3.1;
4' – 4.0); α = 0.8 K/s
Fig. 3 (curves 1-4) shows, that helium released
from the tantalum coating within the temperature range
of 1000 ∆T 1800 K. A single peak of helium ther-
mal desorption with maximum temperature
Tm ≈ 1650 K is observed. A noticeable release of heli-
um from the tungsten coating, according to [8], starts at
temperatures T ≥ 800 K and finished at T ≈ 1800 K (see
Fig. 3, curves 1'-4'). The maximum helium thermal
desorption from the W coating occurs at Tm ≈ 1500 K.
The comparison of the spectra of He thermal desorp-
tion from Ta and W coatings shows, that at the irradia-
tion doses, not exceeding 6.0 × 1017 cm-2 for Ta and
4.0 × 1017 cm-2 for W, the spectra of helium thermal
desorption have the form of a single-peak dependence.
In this case, Tm of the peak of the helium release from
the Ta coating shifts to the higher temperatures, as
compared with the W coating. Any significant decrease
in the peak height is not observed. It was also deter-
mined that the deuterium release from the coatings of
both types occurs at lower temperatures, as compared
to that of helium, (see Figs. 1, 3).
Fig. 4 shows the dependences of the concentrations
C for deuterium (1, 1') and helium (2, 2'), implanted at
the room temperature, on the irradiation dose of D+ and
He+ ions for the tantalum coating (curves 1, 2), and for
the tungsten coating data taken from [8] (curves 1', 2').
Fig. 5 shows the dependences of the capture coeffi-
cient for deuterium ηD (1, 1') and helium ηHe (2, 2') on
the dose of irradiation by D+ and He+ ions for Ta coat-
ing (curves 1, 2) and, according to [8], for the W coat-
ing (curves 1', 2'). As Figs. 4 and 5 show, the values of
the concentration C and the helium capture coefficient
ηHe are much higher for both tantalum and tungsten
coatings than the analogous values of C and ηD for
deuterium. As compared to helium, deuterium accumu-
ISSN 1562-6016. ВАНТ. 2018. №6(118) 65
lates in the coatings of both materials to a lower con-
centration with the capture coefficient of about an
order of magnitude lower. With increase of the dose Ф
of irradiation by He+ ions, the value of ηHe decreases
for both tantalum and tungsten coatings (see Fig. 5,
curves 2 and 2'). Some decrease in ηD with an increase
in Φ of D+ ions is observed only for the tungsten coat-
ing (see Fig. 5, curve 1').
0
2
4
6
8
0 2 4 6 8 10 12 14
Ф, 10
17
cm
-2
C , 10
17
cm
-2
2'
2
1
× 5
1'
× 5
Fig. 4. Dependences of the concentrations of the
implanted deuterium (1, 1') and helium (2, 2') on the
dose of irradiation by D+ and He+ ions for the Ta coat-
ing – curves 1, 2, and, according to [8], for the W
coating – curves 1', 2'; To = 290 K
0
0.2
0.4
0.6
0.8
1
0 2 4 6 8 10 12 14
Ф, 10
17
cm
-2
η He, η D
2
1'
×5
1
×5
2'
Fig. 5. The dependences of the capture coefficient
of deuterium (1, 1') and helium (2, 2') on the dose of
irradiation by D+ and He+ ions for the Ta – curves 1, 2
and, according to [8], for the W coating – curves 1', 2';
To = 290 K
The dependences of the capture coefficient of deu-
terium ηD on the temperature To of the sample irradiat-
ed by D+ ions for the Ta coating are shown in Fig. 6 by
curve 1, and for the W coating by curve 2. With in-
crease of To some decrease in ηD is observed for both
Ta and W coatings. In the analyzed interval ΔTo some
more significant (approximately tenfold) decrease in
the ηD value for the tungsten coating is observed.
0
0.02
0.04
0.06
200 300 400 500 600 700
T o , K
ηD
2
1
Fig. 6. The dependence of the capture coefficient of
deuterium on the temperature To of the sample irradi-
ated by D+ ions for the Ta coating – curve 1, and for
the W coating – curve 2; ФD+ = 2.0 × 1017 cm-2
From the results (see Figs. 4 and 5, curves 2 and 2')
it follows, that at To = 290 K for Ta and W coatings, the
process of He+ ions implantation into them to various
doses in the interval of 1.0 × 1017 ≤ Φ ≤ 1.1 × 1018 cm-2
can be described by the same dependences C = ƒ(Φ) or
ηHe = ƒ(Φ) within the measurement error. But D+ ions
implantation into the same coatings and at the same
temperature To up to different doses in the interval of
1.0 × 1017 ≤ Ф ≤ 1.3 × 1018 cm-2 is not described by the
same dependences C = ƒ(Φ) or ηD = ƒ(Φ ). A particu-
larly large difference is observed in the dependence
ηD = ƒ(Φ). If for the W coating the coefficient of deu-
terium capture decreases with the increase of the irra-
diation dose of D+ ions, then for the Ta coating it does
not change. This may be due to different types of the
deuterium solubility: endothermic (W) or exothermic
(Ta), and due to the ability to form hydrides in tanta-
lum.
The authors of this work early carried out electron
microscopic studies of changes in the microstructure of
W coatings containing deuterium or helium implanted
at room temperature (see [11]). The studies showed the
formation of interstitial dislocation loops and disloca-
tion nets with a mean diameter d ≥ 5 nm and the densi-
ty exceeding 3.2 × 1012 cm-2 in the coatings irradiated
by D+ ions (ФD+ ≤ 6 × 1018 cm-2) or He+
(ФHe+ < 7.0 × 1017 cm-2) while the formation of deuteri-
um and helium bubbles was not observed. The helium
bubbles were observed at ФHe+ ≥ 7 × 1017 cm-2; their
mean diameter and density were 2.5 nm and
5 × 1012 cm-2, respectively, at ФHe+
= 7 × 1017 cm-2.
On the bases of the obtained results, it can be as-
sumed that in both Ta and W coatings [8, 11], irradiat-
ed by D+ or He+ ions, some radiation defects are
formed such as vacancy-type defects and gas-vacancy
complexes, which are traps for the implanted gases, as
well as the dislocation interstitial loops.
CONCLUSIONS
The radiation resistance of tantalum coatings of the
composite structure (SSt + Ta) to the irradiation by He+
and D+ ions of medium energies at the doses of
1.0 × 1017 Ф 1.1 × 1018 cm-2 and at different temper-
atures of the sample under bombardment was studied.
The spectra of thermal desorption of deuterium and
helium from Ta coatings into the vacuum
66 ISSN 1562-6016. ВАНТ. 2018. №6(118)
were studied, and the capture coefficients of these
gases in the coating were determined. When implanting
D+ and He+ ions into the tantalum coatings it was
found, that deuterium accumulates in the coating with
the capture coefficient of approximately an order of
magnitude lower than helium, and its release from the
samples into the vacuum as compared to helium occurs
at lower temperatures.
It is shown that at Tо= 290 K, the accumulation of
He+ ions (1.0 × 1017 ≤ Ф ≤ 1.1 × 1018 cm-2) in the tanta-
lum and tungsten coatings is described by the same
dependences C = ƒ(Φ) and ηHe = ƒ(Φ) within the meas-
urement error. The thermal desorption spectra of heli-
um implanted at doses not exceeding 6.0 × 1017 cm-2
(Ta) or 4.0 × 1017 cm-2 (W) are described by single-
peak dependences. D+ ion implantation into the same
coatings and at the same temperature To up to different
doses 1.0 × 1017 ≤ Ф ≤ 1.3 × 1018 cm-2 is not described
by the same dependences C = ƒ(Φ) and ηD = ƒ(Φ).
In the tantalum coatings irradiated by D+ or He+
ions is supposed the formation of the following radia-
tion defects: vacancy-type defects, dislocation intersti-
tial loops, gas-vacancy complexes.
REFERENCES
1. M. Dias, R. Mateus, et al. Synergistic helium and
deuterium blistering in tungsten–tantalum composites //
J. Nucl. Mater. 2013, v. 442, issues 1-3, p. 69-74.
2. T.J. Novakowski, J.K. Tripathi, A. Hassanein. Tem-
perature-dependent surface modification of Ta due to
high-flux, low-energy He+ ion irradiation // J. Nucl.
Mater. 2015, v. 467, part. 1, p. 244-250.
3. T. Hirai, V. Philipps, et al. Deuterium release and
microstructure of tantalum-tungsten twin limiter ex-
posed in TEXTOR-94 // J. Nucl. Mater. 2002, v. 307-
311, part. 1, p. 79-83.
4. L.H. Taylor, L. Green. Tantalum coatings for inertial
confinement fusion dry wall designs // Fusion Eng.
Des. 1996, v. 32-33, p. 105-111.
5. V.V. Bobkov, A.V. Onishchenko, et al. Ion-
Implanted Deuterium Accumulation in a Deposited
Tungsten Coating // J. Surf. Invest.: X-ray, Synchrotron
and Neutron Tech. 2010, v. 4, № 5, p. 852-858.
6. V.V. Bobkov, L.P. Tishchenko, et al. Implantation
of Helium and Deuterium Ions into Tungsten-Coated
Composite Structures // J. Surf. Invest.: X-ray, Syn-
chrotron and Neutron Tech. 2011, v. 5, № 4, p. 806-
811.
7. V.V. Bobkov, R.I. Starovoitov, et al. Deuterium-Ion
Implantation into Composite Structures with Tungsten
Coatings // J. Surf. Invest.: X-ray, Synchrotron and
Neutron Tech. 2014, v. 8, № 5, p. 853-858.
8. N.A. Azarenkov, V.V. Bobkov, et al. Sequential
implantations of deuterium and helium ions into tung-
sten-coated composite structures // Problems of Atomic
Science and Technology. Series “Plasma Physics”
(22). 2016, № 6, p. 73-76.
9. J.F. Ziegler, J.P. Biersack, M.D. Ziegler. The Stop-
ping and Range of Ions in Solids, available from www.
SRIM. org (2008.04).
10. B.M. Smirnov. Atomnye stolknovenija i elemen-
tarnye processy v plazme. Moskow: “Atomizdat”, 1968
(in Russian).
11. V.V. Bobkov, R.I. Starovoitov, et al. Vlijanie im-
plantirovannyh ionov dejterija i gelija na strukturu
kondensirovannyh vol'framovyh pokrytij // Proc. of the
20th Intern. ISI Conf., Russia, Aug. 25-29. 2011, v. 2,
p. 61-64 (in Russian).
Article received 11.10.2018
ИМПЛАНТАЦИЯ ИОНОВ ДЕЙТЕРИЯ И ГЕЛИЯ В КОМПОЗИЦИОННУЮ СТРУКТУРУ
С ТАНТАЛОВЫМ ПОКРЫТИЕМ
В.В. Бобков, Л.П. Тищенко, Ю.И. Ковтуненко, А.Б. Цапенко, А.А. Скрипник, Ю.Е. Логачев,
Л.А. Гамаюнова
Методом термодесорбционной спектрометрии исследованы процессы накопления и выделения дейтерия
и гелия в вакуум из танталовых покрытий композиционной структуры. Количество накопленного дейтерия и
гелия и вид спектров термической десорбции показаны в зависимости от дозы облучения ионами D+ или He+
и температуры образца при облучении. Предложены возможные механизмы этих процессов.
ІМПЛАНТАЦІЯ ІОНІВ ДЕЙТЕРІЮ ТА ГЕЛІЮ В КОМПОЗИЦІЙНУ СТРУКТУРУ
З ТАНТАЛОВИМ ПОКРИТТЯМ
В.В. Бобков, Л.П. Тищенко, Ю.І. Ковтуненко, О.Б. Цапенко, А.О. Скрипник, Ю.Є. Логачов,
Л.О. Гамаюнова
Методом термодесорбційної спектрометрії досліджено процеси накопичення і виділення дейтерію та ге-
лію у вакуум із танталових покриттів композиційної структури. Кількість накопиченого дейтерію та гелію і
вигляд спектрів термічної десорбції показано в залежності від дози опромінення іонами D+ або He+ та тем-
ператури зразка при опроміненні. Запропоновано можливі механізми цих процесів.
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