Structural Aspect of Formation of a Nanosystem of In/In₄Se₃ (100)

• Published in: Металлофизика и новейшие технологии
• Date: 2018
• Main Authors: Galiy, P.V., Mazur, P., Ciszewski, A., Nenchuk, T.M., Yarovets’, I.R., Dveriy, O.R.
• Format: Article
• Language: English
• Published: Інститут металофізики ім. Г.В. Курдюмова НАН України 2018
• Subjects: Строение и свойства наноразмерных и мезоскопических материалов
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/151868
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Structural Aspect of Formation of a Nanosystem of In/In₄Se₃ (100) / P.V. Galiy, P. Mazur, A. Ciszewski, T.M. Nenchuk, I.R. Yarovets’, O.R. Dveriy // Металлофизика и новейшие технологии. — 2018. — Т. 40, № 10. — С. 1349-1358. — Бібліогр.: 10 назв. — англ.

Self-assembled indium deposition-induced nanostructures are obtained on the UHV cleaved (100) surface of In₄Se₃ layered semiconductor crystals. The small indium-deposition rates and short deposition times are chosen to study growth orientation and origin of nanostructures observed by scanning tunnel...