The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector

The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of o...

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Published in:Condensed Matter Physics
Date:2014
Main Authors: Tkach, M.V., Seti, Ju.O., Grynyshyn, Y.B., Voitsekhivska, O.M.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/153485
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Cite this:The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector / M.V. Tkach, Ju.O. Seti, Y.B. Grynyshyn, O.M. Voitsekhivska // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23704:1-10. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Tkach, M.V.
Seti, Ju.O.
Grynyshyn, Y.B.
Voitsekhivska, O.M.
author_facet Tkach, M.V.
Seti, Ju.O.
Grynyshyn, Y.B.
Voitsekhivska, O.M.
citation_txt The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector / M.V. Tkach, Ju.O. Seti, Y.B. Grynyshyn, O.M. Voitsekhivska // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23704:1-10. — Бібліогр.: 17 назв. — англ.
collection DSpace DC
container_title Condensed Matter Physics
description The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa₁₋xAs which is an active region of quantum cascade detector. It is established that independently of the temperature, the energy of quantum transition during the process of electromagnetic field absorption is a nonlinear weakly varying function of the position of the inner barrier with respect to the outer barriers of the structure. З перших принципiв у моделi ефективних мас та поляризацiйного континууму встановлено гамiльтонiан системи електронiв взаємодiючих з iнтерфейсними фононами у трибар’єрнiй резонансно-тунельнiй
 структурi. Методом функцiй Грiна розраховано температурнi змiщення й загасання найнижчих (робочих)
 електронних станiв у залежностi вiд геометричної конфiгурацiї наносистеми GaAs/ AlxGa₁₋xAs як активної зони квантового каскадного детектора. Встановлено, що незалежно вiд температури системи енергiя
 квантового переходу в процесах поглинання електромагнiтного поля є нелiнiйною слабозмiнною функцiєю вiд положення внутрiшнього вiдносно зовнiшнiх бар’єра наносистеми.
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language English
last_indexed 2025-12-07T16:12:43Z
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spelling Tkach, M.V.
Seti, Ju.O.
Grynyshyn, Y.B.
Voitsekhivska, O.M.
2019-06-14T10:36:31Z
2019-06-14T10:36:31Z
2014
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector / M.V. Tkach, Ju.O. Seti, Y.B. Grynyshyn, O.M. Voitsekhivska // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23704:1-10. — Бібліогр.: 17 назв. — англ.
1607-324X
arXiv:1407.2431
DOI:10.5488/CMP.17.23704
PACS: 78.67.De, 63.20.Kr, 72.10.Di
https://nasplib.isofts.kiev.ua/handle/123456789/153485
The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa₁₋xAs which is an active region of quantum cascade detector. It is established that independently of the temperature, the energy of quantum transition during the process of electromagnetic field absorption is a nonlinear weakly varying function of the position of the inner barrier with respect to the outer barriers of the structure.
З перших принципiв у моделi ефективних мас та поляризацiйного континууму встановлено гамiльтонiан системи електронiв взаємодiючих з iнтерфейсними фононами у трибар’єрнiй резонансно-тунельнiй
 структурi. Методом функцiй Грiна розраховано температурнi змiщення й загасання найнижчих (робочих)
 електронних станiв у залежностi вiд геометричної конфiгурацiї наносистеми GaAs/ AlxGa₁₋xAs як активної зони квантового каскадного детектора. Встановлено, що незалежно вiд температури системи енергiя
 квантового переходу в процесах поглинання електромагнiтного поля є нелiнiйною слабозмiнною функцiєю вiд положення внутрiшнього вiдносно зовнiшнiх бар’єра наносистеми.
en
Інститут фізики конденсованих систем НАН України
Condensed Matter Physics
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
Вплив iнтерфейсних фононiв на електроннi робочi стани трибар’єрної резонансно-тунельної наноструктури як активної зони квантового каскадного детектора
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spellingShingle The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
Tkach, M.V.
Seti, Ju.O.
Grynyshyn, Y.B.
Voitsekhivska, O.M.
title The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
title_alt Вплив iнтерфейсних фононiв на електроннi робочi стани трибар’єрної резонансно-тунельної наноструктури як активної зони квантового каскадного детектора
title_full The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
title_fullStr The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
title_full_unstemmed The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
title_short The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
title_sort effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
url https://nasplib.isofts.kiev.ua/handle/123456789/153485
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