The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector
The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of o...
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| Veröffentlicht in: | Condensed Matter Physics |
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| Datum: | 2014 |
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Інститут фізики конденсованих систем НАН України
2014
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| Zitieren: | The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector / M.V. Tkach, Ju.O. Seti, Y.B. Grynyshyn, O.M. Voitsekhivska // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23704:1-10. — Бібліогр.: 17 назв. — англ. |
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Tkach, M.V. Seti, Ju.O. Grynyshyn, Y.B. Voitsekhivska, O.M. 2019-06-14T10:36:31Z 2019-06-14T10:36:31Z 2014 The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector / M.V. Tkach, Ju.O. Seti, Y.B. Grynyshyn, O.M. Voitsekhivska // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23704:1-10. — Бібліогр.: 17 назв. — англ. 1607-324X arXiv:1407.2431 DOI:10.5488/CMP.17.23704 PACS: 78.67.De, 63.20.Kr, 72.10.Di https://nasplib.isofts.kiev.ua/handle/123456789/153485 The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa₁₋xAs which is an active region of quantum cascade detector. It is established that independently of the temperature, the energy of quantum transition during the process of electromagnetic field absorption is a nonlinear weakly varying function of the position of the inner barrier with respect to the outer barriers of the structure. З перших принципiв у моделi ефективних мас та поляризацiйного континууму встановлено гамiльтонiан системи електронiв взаємодiючих з iнтерфейсними фононами у трибар’єрнiй резонансно-тунельнiй структурi. Методом функцiй Грiна розраховано температурнi змiщення й загасання найнижчих (робочих) електронних станiв у залежностi вiд геометричної конфiгурацiї наносистеми GaAs/ AlxGa₁₋xAs як активної зони квантового каскадного детектора. Встановлено, що незалежно вiд температури системи енергiя квантового переходу в процесах поглинання електромагнiтного поля є нелiнiйною слабозмiнною функцiєю вiд положення внутрiшнього вiдносно зовнiшнiх бар’єра наносистеми. en Інститут фізики конденсованих систем НАН України Condensed Matter Physics The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector Вплив iнтерфейсних фононiв на електроннi робочi стани трибар’єрної резонансно-тунельної наноструктури як активної зони квантового каскадного детектора Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector |
| spellingShingle |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector Tkach, M.V. Seti, Ju.O. Grynyshyn, Y.B. Voitsekhivska, O.M. |
| title_short |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector |
| title_full |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector |
| title_fullStr |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector |
| title_full_unstemmed |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector |
| title_sort |
effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector |
| author |
Tkach, M.V. Seti, Ju.O. Grynyshyn, Y.B. Voitsekhivska, O.M. |
| author_facet |
Tkach, M.V. Seti, Ju.O. Grynyshyn, Y.B. Voitsekhivska, O.M. |
| publishDate |
2014 |
| language |
English |
| container_title |
Condensed Matter Physics |
| publisher |
Інститут фізики конденсованих систем НАН України |
| format |
Article |
| title_alt |
Вплив iнтерфейсних фононiв на електроннi робочi стани трибар’єрної резонансно-тунельної наноструктури як активної зони квантового каскадного детектора |
| description |
The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa₁₋xAs which is an active region of quantum cascade detector. It is established that independently of the temperature, the energy of quantum transition during the process of electromagnetic field absorption is a nonlinear weakly varying function of the position of the inner barrier with respect to the outer barriers of the structure.
З перших принципiв у моделi ефективних мас та поляризацiйного континууму встановлено гамiльтонiан системи електронiв взаємодiючих з iнтерфейсними фононами у трибар’єрнiй резонансно-тунельнiй
структурi. Методом функцiй Грiна розраховано температурнi змiщення й загасання найнижчих (робочих)
електронних станiв у залежностi вiд геометричної конфiгурацiї наносистеми GaAs/ AlxGa₁₋xAs як активної зони квантового каскадного детектора. Встановлено, що незалежно вiд температури системи енергiя
квантового переходу в процесах поглинання електромагнiтного поля є нелiнiйною слабозмiнною функцiєю вiд положення внутрiшнього вiдносно зовнiшнiх бар’єра наносистеми.
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| issn |
1607-324X |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/153485 |
| citation_txt |
The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector / M.V. Tkach, Ju.O. Seti, Y.B. Grynyshyn, O.M. Voitsekhivska // Condensed Matter Physics. — 2014. — Т. 17, № 2. — С. 23704:1-10. — Бібліогр.: 17 назв. — англ. |
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2025-12-07T16:12:43Z |
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