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Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/InxGa₁-xAs/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Побудовано модель просторово-часового розподiлу точкових дефектiв у тришаровiй напруженiй наног...

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Published in:Condensed Matter Physics
Date:2015
Main Authors: Peleshchak, R.M., Kulyk, N.Ya., Doroshenko, M.V.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2015
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/153567
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model / R.M. Peleshchak, N.Ya. Kulyk, M.V. Doroshenko // Condensed Matter Physics. — 2015. — Т. 18, № 2. — С. 23602: 1–12. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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