Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions

The composition dependences of thermoelectric (TE) properties of (Bi₁₋xSbx)₂Te₃ solid solutions (0 < x < 1) produced by cold pressing and subsequent annealing were investigated at room temperature. Samples were prepared from cast polycrystals, obtained by the cooling of melt down to ro...

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Veröffentlicht in:Functional Materials
Datum:2018
Hauptverfasser: Martynova, K.V., Rogacheva, E.I.
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Sprache:Englisch
Veröffentlicht: НТК «Інститут монокристалів» НАН України 2018
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Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/154072
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Zitieren:Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions / K.V. Martynova, E.I. Rogacheva // Functional Materials. — 2018. — Т. 25, № 1. — С. 54-60. — Бібліогр.: 37 назв. — англ.

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author Martynova, K.V.
Rogacheva, E.I.
author_facet Martynova, K.V.
Rogacheva, E.I.
citation_txt Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions / K.V. Martynova, E.I. Rogacheva // Functional Materials. — 2018. — Т. 25, № 1. — С. 54-60. — Бібліогр.: 37 назв. — англ.
collection DSpace DC
container_title Functional Materials
description The composition dependences of thermoelectric (TE) properties of (Bi₁₋xSbx)₂Te₃ solid solutions (0 < x < 1) produced by cold pressing and subsequent annealing were investigated at room temperature. Samples were prepared from cast polycrystals, obtained by the cooling of melt down to room temperature in evacuated quartz ampoules and subsequent annealing. It was established that cast samples exhibited p-type conductivity in the entire composition range, and an increase in the Sb₂Te₃ content led to the growth of electrical conductivity and drop of the Seebeck coefficient. The change of the conductivity type from positive to negative in the composition range x = 0 - 0.6 took place after cold pressing and composition dependencies of the properties became more complex. The maximum figure of merit value (Zmax = (3.1±0.4)·10-3 K-1) that was achieved in cold-pressed annealed samples at x = 0.8 was comparable to the values of Z for single crystals of undoped (Bi₁₋xSbx)₂Te₃ solid solutions and for polycrystalline samples produced by other methods. It follows from the data obtained that the proposed method of preparing the samples of (Bi₁₋xSbx)₂Te₃ solid solutions by cold pressing and subsequent annealing may appear to be useful in thermoelectric devices.
first_indexed 2025-12-07T18:42:12Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1027-5495
language English
last_indexed 2025-12-07T18:42:12Z
publishDate 2018
publisher НТК «Інститут монокристалів» НАН України
record_format dspace
spelling Martynova, K.V.
Rogacheva, E.I.
2019-06-15T06:40:41Z
2019-06-15T06:40:41Z
2018
Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions / K.V. Martynova, E.I. Rogacheva // Functional Materials. — 2018. — Т. 25, № 1. — С. 54-60. — Бібліогр.: 37 назв. — англ.
1027-5495
doi:https://doi.org/10.15407/fm25.01.054
https://nasplib.isofts.kiev.ua/handle/123456789/154072
The composition dependences of thermoelectric (TE) properties of (Bi₁₋xSbx)₂Te₃ solid solutions (0 < x < 1) produced by cold pressing and subsequent annealing were investigated at room temperature. Samples were prepared from cast polycrystals, obtained by the cooling of melt down to room temperature in evacuated quartz ampoules and subsequent annealing. It was established that cast samples exhibited p-type conductivity in the entire composition range, and an increase in the Sb₂Te₃ content led to the growth of electrical conductivity and drop of the Seebeck coefficient. The change of the conductivity type from positive to negative in the composition range x = 0 - 0.6 took place after cold pressing and composition dependencies of the properties became more complex. The maximum figure of merit value (Zmax = (3.1±0.4)·10-3 K-1) that was achieved in cold-pressed annealed samples at x = 0.8 was comparable to the values of Z for single crystals of undoped (Bi₁₋xSbx)₂Te₃ solid solutions and for polycrystalline samples produced by other methods. It follows from the data obtained that the proposed method of preparing the samples of (Bi₁₋xSbx)₂Te₃ solid solutions by cold pressing and subsequent annealing may appear to be useful in thermoelectric devices.
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НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
Article
published earlier
spellingShingle Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
Martynova, K.V.
Rogacheva, E.I.
Characterization and properties
title Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
title_full Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
title_fullStr Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
title_full_unstemmed Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
title_short Thermoelectric properties of cold pressed samples of semiconductor (Bi₁₋xSbx)₂Te₃ solid solutions
title_sort thermoelectric properties of cold pressed samples of semiconductor (bi₁₋xsbx)₂te₃ solid solutions
topic Characterization and properties
topic_facet Characterization and properties
url https://nasplib.isofts.kiev.ua/handle/123456789/154072
work_keys_str_mv AT martynovakv thermoelectricpropertiesofcoldpressedsamplesofsemiconductorbi1xsbx2te3solidsolutions
AT rogachevaei thermoelectricpropertiesofcoldpressedsamplesofsemiconductorbi1xsbx2te3solidsolutions