Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal

• Опубліковано в: : Functional Materials
• Дата: 2018
• Автори: Yakovlev, V., Trefilova, L., Alekseev, V., Karnaukhova, A., Shpylynska, O., Lebedynskiy, A., Tarakhno, O.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2018
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/154076
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal / V. Yakovlev, L. Trefilova, V. Alekseev, A. Karnaukhova, O. Shpylynska, A. Lebedynskiy, O. Tarakhno // Functional Materials. — 2018. — Т. 25, № 1. — С. 13-20. — Бібліогр.: 19 назв. — англ.

Luminescence properties of Tl⁰va⁺ and Tl⁺vc⁻ color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl⁰va⁺ and hole Tl⁺vc⁻ color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl⁺ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl⁺ to Tl⁰va⁺ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl⁺ to Tl⁺vc⁻ centers results in long-wave spectral shift and the duration increase of the scintillation pulse.