Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal
Luminescence properties of Tl⁰va⁺ and Tl⁺vc⁻ color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl⁰va⁺ and hole Tl⁺vc⁻ color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crysta...
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| Published in: | Functional Materials |
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| Date: | 2018 |
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| Format: | Article |
| Language: | English |
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НТК «Інститут монокристалів» НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/154076 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal / V. Yakovlev, L. Trefilova, V. Alekseev, A. Karnaukhova, O. Shpylynska, A. Lebedynskiy, O. Tarakhno // Functional Materials. — 2018. — Т. 25, № 1. — С. 13-20. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862571010355625984 |
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| author | Yakovlev, V. Trefilova, L. Alekseev, V. Karnaukhova, A. Shpylynska, O. Lebedynskiy, A. Tarakhno, O. |
| author_facet | Yakovlev, V. Trefilova, L. Alekseev, V. Karnaukhova, A. Shpylynska, O. Lebedynskiy, A. Tarakhno, O. |
| citation_txt | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal / V. Yakovlev, L. Trefilova, V. Alekseev, A. Karnaukhova, O. Shpylynska, A. Lebedynskiy, O. Tarakhno // Functional Materials. — 2018. — Т. 25, № 1. — С. 13-20. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Luminescence properties of Tl⁰va⁺ and Tl⁺vc⁻ color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl⁰va⁺ and hole Tl⁺vc⁻ color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl⁺ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl⁺ to Tl⁰va⁺ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl⁺ to Tl⁺vc⁻ centers results in long-wave spectral shift and the duration increase of the scintillation pulse.
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| first_indexed | 2025-11-26T03:25:15Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-154076 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-11-26T03:25:15Z |
| publishDate | 2018 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Yakovlev, V. Trefilova, L. Alekseev, V. Karnaukhova, A. Shpylynska, O. Lebedynskiy, A. Tarakhno, O. 2019-06-15T06:49:00Z 2019-06-15T06:49:00Z 2018 Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal / V. Yakovlev, L. Trefilova, V. Alekseev, A. Karnaukhova, O. Shpylynska, A. Lebedynskiy, O. Tarakhno // Functional Materials. — 2018. — Т. 25, № 1. — С. 13-20. — Бібліогр.: 19 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm25.01.013 https://nasplib.isofts.kiev.ua/handle/123456789/154076 Luminescence properties of Tl⁰va⁺ and Tl⁺vc⁻ color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl⁰va⁺ and hole Tl⁺vc⁻ color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crystal, but participate in scintillation process to get energy from Tl⁺ centers by resonance. Degradation of the light yield of the irradiated CsI:Tl crystal is caused by the radiative energy transfer from Tl⁺ to Tl⁰va⁺ centers, whose emission is quenched at temperature above 210 K. Non-radiative energy transfer from Tl⁺ to Tl⁺vc⁻ centers results in long-wave spectral shift and the duration increase of the scintillation pulse. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal Article published earlier |
| spellingShingle | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal Yakovlev, V. Trefilova, L. Alekseev, V. Karnaukhova, A. Shpylynska, O. Lebedynskiy, A. Tarakhno, O. Characterization and properties |
| title | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal |
| title_full | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal |
| title_fullStr | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal |
| title_full_unstemmed | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal |
| title_short | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal |
| title_sort | influence of color centers on the luminescent response of radiation-damaged csi:tl crystal |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/154076 |
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