Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal
Luminescence properties of Tl⁰va⁺ and Tl⁺vc⁻ color centers induced by irradiation in CsI:Tl crystal are studied within a temperature range of 80-300 K. It is found, that electron Tl⁰va⁺ and hole Tl⁺vc⁻ color centers arising due to radiation damage do not reduce conversion efficiency of CsI:Tl crysta...
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| Published in: | Functional Materials |
|---|---|
| Date: | 2018 |
| Main Authors: | Yakovlev, V., Trefilova, L., Alekseev, V., Karnaukhova, A., Shpylynska, O., Lebedynskiy, A., Tarakhno, O. |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2018
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/154076 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of color centers on the luminescent response of radiation-damaged CsI:Tl crystal / V. Yakovlev, L. Trefilova, V. Alekseev, A. Karnaukhova, O. Shpylynska, A. Lebedynskiy, O. Tarakhno // Functional Materials. — 2018. — Т. 25, № 1. — С. 13-20. — Бібліогр.: 19 назв. — англ. |
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