Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition
The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate and temperature. The limiting stages of dissolut...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2018 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2018
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/154462 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2018. — Т. 25, № 1. — С. 165-171. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862717412435034112 |
|---|---|
| author | Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| author_facet | Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. |
| citation_txt | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2018. — Т. 25, № 1. — С. 165-171. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate and temperature. The limiting stages of dissolution process, regions of the polishing and unpolishing solutions have been established. The polishing etchant compositions and conditions for chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been proposed and optimized.
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| first_indexed | 2025-12-07T18:10:32Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-154462 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T18:10:32Z |
| publishDate | 2018 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. 2019-06-15T15:48:52Z 2019-06-15T15:48:52Z 2018 Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2018. — Т. 25, № 1. — С. 165-171. — Бібліогр.: 11 назв. — англ. 1027-5495 DOI:https://doi.org/10.15407/fm25.01.165 https://nasplib.isofts.kiev.ua/handle/123456789/154462 The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate and temperature. The limiting stages of dissolution process, regions of the polishing and unpolishing solutions have been established. The polishing etchant compositions and conditions for chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been proposed and optimized. en НТК «Інститут монокристалів» НАН України Functional Materials Technology Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition Article published earlier |
| spellingShingle | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition Levchenko, I.V. Tomashyk, V.M. Stratiychuk, I.B. Malanych, G.P. Stanetska, A.S. Korchovyi, A.A. Technology |
| title | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition |
| title_full | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition |
| title_fullStr | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition |
| title_full_unstemmed | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition |
| title_short | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition |
| title_sort | chemical-dynamic polishing of inas, insb, gaas and gasb crystals with (nh₄)₂cr₂o₇-hbr-citric acid etching composition |
| topic | Technology |
| topic_facet | Technology |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/154462 |
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