Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition
The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate and temperature. The limiting stages of dissolut...
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| Published in: | Functional Materials |
|---|---|
| Date: | 2018 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2018
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/154462 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2018. — Т. 25, № 1. — С. 165-171. — Бібліогр.: 11 назв. — англ. |