Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2015
• ISSN: 1607-324X
• Hauptverfasser: Peleshchak, R.M., Kuzyk, O.V., Dan'kiv, O.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/155795
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv // Condensed Matter Physics. — 2015. — Т. 18, № 4. — С. 43801: 1–8. — Бібліогр.: 23 назв. — англ.

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the...