The perfect spin injection in silicene FS/NS junction

We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning t...

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Datum:2017
Hauptverfasser: Tian, H.-Y., Xu, N., Luo, G., Ren, Ch.-D.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики конденсованих систем НАН України 2017
Schriftenreihe:Condensed Matter Physics
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/156997
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The perfect spin injection in silicene FS/NS junction / H.-Y. Tian, N. Xu, G. Luo, Ch.-D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23702: 1–6 . — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Zusammenfassung:We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed light on making silicene-based spin and valley devices in the spintronics and valleytronics field.