The perfect spin injection in silicene FS/NS junction

We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning t...

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Bibliographic Details
Date:2017
Main Authors: Tian, H.-Y., Xu, N., Luo, G., Ren, Ch.-D.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2017
Series:Condensed Matter Physics
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/156997
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The perfect spin injection in silicene FS/NS junction / H.-Y. Tian, N. Xu, G. Luo, Ch.-D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23702: 1–6 . — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed light on making silicene-based spin and valley devices in the spintronics and valleytronics field.