Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron
 intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched.
 The problem is solved in the framework of the effective mass approx...
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| Veröffentlicht in: | Condensed Matter Physics |
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| Datum: | 2018 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики конденсованих систем НАН України
2018
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/157039 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862641077625815040 |
|---|---|
| author | Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. |
| author_facet | Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. |
| citation_txt | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Condensed Matter Physics |
| description | The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron
intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched.
The problem is solved in the framework of the effective mass approximation and rectangular potential wells and
barriers model using the method of wave function expansion over a complete set of electron wave functions in
nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground
state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of
intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of
electric field intensity at a different location of impurity.
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron
intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched.
The problem is solved in the framework of the effective mass approximation and rectangular potential wells and
barriers model using the method of wave function expansion over a complete set of electron wave functions in
nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground
state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of
intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of
electric field intensity at a different location of impurity.
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| first_indexed | 2025-12-01T04:12:51Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-157039 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1607-324X |
| language | English |
| last_indexed | 2025-12-01T04:12:51Z |
| publishDate | 2018 |
| publisher | Інститут фізики конденсованих систем НАН України |
| record_format | dspace |
| spelling | Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. 2019-06-19T13:30:32Z 2019-06-19T13:30:32Z 2018 Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ. 1607-324X PACS: 71.38.-k, 63.20.kd, 63.20.dk, 72.10.Di DOI:10.5488/CMP.21.13703 arXiv:1803.11425 https://nasplib.isofts.kiev.ua/handle/123456789/157039 The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron
 intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched.
 The problem is solved in the framework of the effective mass approximation and rectangular potential wells and
 barriers model using the method of wave function expansion over a complete set of electron wave functions in
 nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground
 state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of
 intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of
 electric field intensity at a different location of impurity. The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron
 intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched.
 The problem is solved in the framework of the effective mass approximation and rectangular potential wells and
 barriers model using the method of wave function expansion over a complete set of electron wave functions in
 nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground
 state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of
 intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of
 electric field intensity at a different location of impurity. en Інститут фізики конденсованих систем НАН України Condensed Matter Physics Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field Оптичнi властивостi квантової точки GaAs/AlxGa1−xAs/GaAs з нецентральною домiшкою пiд впливом електричного поля Article published earlier |
| spellingShingle | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field Holovatsky, V.A. Yakhnevych, M.Ya. Voitsekhivska, O.M. |
| title | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_alt | Оптичнi властивостi квантової точки GaAs/AlxGa1−xAs/GaAs з нецентральною домiшкою пiд впливом електричного поля |
| title_full | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_fullStr | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_full_unstemmed | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_short | Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field |
| title_sort | optical properties of gaas/alxga1-xas/gaas quantum dot with off-central impurity driven by electric field |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/157039 |
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