Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2018
• Hauptverfasser: Holovatsky, V.A., Yakhnevych, M.Ya., Voitsekhivska, O.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2018
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/157039
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field / V.A. Holovatsky, M.Ya. Yakhnevych, O.M. Voitsekhivska // Condensed Matter Physics. — 2018. — Т. 21, № 1. — С. 13703: 1–9. — Бібліогр.: 28 назв. — англ.

The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/AlxGa1−xAs/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rect...