Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Char...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2018 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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НТК «Інститут монокристалів» НАН України
2018
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/157164 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862706202396327936 |
|---|---|
| author | Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. |
| author_facet | Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. |
| citation_txt | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Characteristics), the dynamics of the change in energy parameters is established and the role of the energy states at the heterojunction boundary in formation of the contact potential difference is determined. A model of the energy diagram of the heterojunction is proposed, which describes well the electrophysical phenomena observed during the experiment. The mechanisms of formation of direct and return currents through the energy barrier of n-FeS₂/p-InSe are determined.
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| first_indexed | 2025-12-07T16:58:08Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-157164 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T16:58:08Z |
| publishDate | 2018 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. 2019-06-19T16:43:09Z 2019-06-19T16:43:09Z 2018 Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. 1027-5495 DOI:https://doi.org/10.15407/fm25.03.463 https://nasplib.isofts.kiev.ua/handle/123456789/157164 Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Characteristics), the dynamics of the change in energy parameters is established and the role of the energy states at the heterojunction boundary in formation of the contact potential difference is determined. A model of the energy diagram of the heterojunction is proposed, which describes well the electrophysical phenomena observed during the experiment. The mechanisms of formation of direct and return currents through the energy barrier of n-FeS₂/p-InSe are determined. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe Article published earlier |
| spellingShingle | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe Tkachuk, I.G. Orletsky, I.G. Kovalyuk, Z.D. Marianchuk, P.D. Characterization and properties |
| title | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_full | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_fullStr | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_full_unstemmed | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_short | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe |
| title_sort | electrical properties of photosensitive heterostructures n-fes₂/p-inse |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/157164 |
| work_keys_str_mv | AT tkachukig electricalpropertiesofphotosensitiveheterostructuresnfes2pinse AT orletskyig electricalpropertiesofphotosensitiveheterostructuresnfes2pinse AT kovalyukzd electricalpropertiesofphotosensitiveheterostructuresnfes2pinse AT marianchukpd electricalpropertiesofphotosensitiveheterostructuresnfes2pinse |