Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe

Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Char...

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Опубліковано в: :Functional Materials
Дата:2018
Автори: Tkachuk, I.G., Orletsky, I.G., Kovalyuk, Z.D., Marianchuk, P.D.
Формат: Стаття
Мова:Англійська
Опубліковано: НТК «Інститут монокристалів» НАН України 2018
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/157164
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Tkachuk, I.G.
Orletsky, I.G.
Kovalyuk, Z.D.
Marianchuk, P.D.
author_facet Tkachuk, I.G.
Orletsky, I.G.
Kovalyuk, Z.D.
Marianchuk, P.D.
citation_txt Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ.
collection DSpace DC
container_title Functional Materials
description Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Characteristics), the dynamics of the change in energy parameters is established and the role of the energy states at the heterojunction boundary in formation of the contact potential difference is determined. A model of the energy diagram of the heterojunction is proposed, which describes well the electrophysical phenomena observed during the experiment. The mechanisms of formation of direct and return currents through the energy barrier of n-FeS₂/p-InSe are determined.
first_indexed 2025-12-07T16:58:08Z
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last_indexed 2025-12-07T16:58:08Z
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publisher НТК «Інститут монокристалів» НАН України
record_format dspace
spelling Tkachuk, I.G.
Orletsky, I.G.
Kovalyuk, Z.D.
Marianchuk, P.D.
2019-06-19T16:43:09Z
2019-06-19T16:43:09Z
2018
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ.
1027-5495
DOI:https://doi.org/10.15407/fm25.03.463
https://nasplib.isofts.kiev.ua/handle/123456789/157164
Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Characteristics), the dynamics of the change in energy parameters is established and the role of the energy states at the heterojunction boundary in formation of the contact potential difference is determined. A model of the energy diagram of the heterojunction is proposed, which describes well the electrophysical phenomena observed during the experiment. The mechanisms of formation of direct and return currents through the energy barrier of n-FeS₂/p-InSe are determined.
en
НТК «Інститут монокристалів» НАН України
Functional Materials
Characterization and properties
Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
Article
published earlier
spellingShingle Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
Tkachuk, I.G.
Orletsky, I.G.
Kovalyuk, Z.D.
Marianchuk, P.D.
Characterization and properties
title Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
title_full Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
title_fullStr Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
title_full_unstemmed Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
title_short Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
title_sort electrical properties of photosensitive heterostructures n-fes₂/p-inse
topic Characterization and properties
topic_facet Characterization and properties
url https://nasplib.isofts.kiev.ua/handle/123456789/157164
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AT orletskyig electricalpropertiesofphotosensitiveheterostructuresnfes2pinse
AT kovalyukzd electricalpropertiesofphotosensitiveheterostructuresnfes2pinse
AT marianchukpd electricalpropertiesofphotosensitiveheterostructuresnfes2pinse