Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe
Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Char...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2018 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/157164 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ. |