Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe

• Опубліковано в: : Functional Materials
• Дата: 2018
• Автори: Tkachuk, I.G., Orletsky, I.G., Kovalyuk, Z.D., Marianchuk, P.D.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2018
• Теми: Characterization and properties
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/157164
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Electrical properties of photosensitive heterostructures n-FeS₂/p-InSe / I.G. Tkachuk, I.G. Orletsky, Z.D. Kovalyuk, P.D. Marianchuk// Functional Materials. — 2018. — Т. 25, № 3. — С. 463-470. — Бібліогр.: 37 назв. — англ.

Conditions for production of photosensitive anisotypic n-FeS₂/p-InSe heterojunctions by the method of low-temperature spray-pyrolysis of thin films of pyrite on crystalline p-InSe substrates are studied. On the basis of analysis of temperature dependences of direct and reverse VACs (Volt-Ampere Char...